silicon bipolar transistor

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• Bipolar transistor biasing — Bipolar transistor amplifiers must be properly biased to operate correctly. In circuits made with individual devices (discrete circuits), biasing networks consisting of resistors are commonly employed. Much more elaborate biasing arrangements are …   Wikipedia

• Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… …   Wikipedia

• Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …   Wikipedia

• Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …   Wikipedia

• transistor — /tran zis teuhr/, n. 1. Electronics. a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in… …   Universalium

• Silicon-germanium — SiGe (IPA|ˈsɪɡɪː, IPA|ˈsaɪdʒɪ), or silicon germanium, is a general term for the alloy Si1 xGex which consists of any molar ratio of silicon and germanium. It is commonly used as a semiconductor material in integrated circuits (ICs) for… …   Wikipedia

• Transistor — Eine Auswahl an diskreten Transistoren in verschiedenen Gehäuseformen Ein Transistor ist ein elektronisches Bauelement zum Schalten und Verstärken von elektrischen Signalen, ohne dabei mechanische Bewegungen auszuführen. Transistoren sind die… …   Deutsch Wikipedia

• Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …   Wikipedia

• Darlington transistor — Circuit diagram of a Darlington pair using NPN transistors In electronics, the Darlington transistor (often called a Darlington pair) is a compound structure consisting of two bipolar transistors (either integrated or separated devices) connected …   Wikipedia

• Avalanche transistor — An Avalanche Transistor is a bipolar junction transistor designed for operation in the region of its collector current/collector to emitter voltage characteristics beyond the collector to emitter breakdown voltage, called avalanche breakdown… …   Wikipedia

• Point-contact transistor — A point contact transistor was the first type of solid state electronic transistor ever constructed. It was made by researchers John Bardeen and Walter Houser Brattain at Bell Laboratories in December of 1947. They were working with physicist… …   Wikipedia